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Study of LPE methods for growth of InGaAsP/InP CW lasers

Study of LPE methods for growth of InGaAsP/InP CW lasers

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Published by National Aeronautics and Space Administration, Scientific and Technical Information Office, For sale by the National Technical Information Service] in Washington, D.C, [Springfield, Va .
Written in English

    Subjects:
  • Lasers

  • Edition Notes

    StatementI Ladany ... [et al.] ; prepared for Langley Research Center under contract NAS1-15440
    SeriesNASA contractor report -- 3268
    ContributionsLadany, I, United States. National Aeronautics and Space Administration. Scientific and Technical Information Office, Langley Research Center
    The Physical Object
    Paginationvii, 39 p. :
    Number of Pages39
    ID Numbers
    Open LibraryOL14930505M

    InGaAs/InGaAsP/InP lasers with an operating wavelength of µm. Characterisation results of InGaAs/InGaAsP/InP lasers are given of two etching methods, namely wet chemical etching and reactive ion etching. Relative advantages and disadvantages of these two methods are also discussed comparatively. I. INTRODUCTION. A brief overview is presented of materials aspects of InP and InGaAsP compound semiconductors that are being used in state-of-the-art lightwave communication systems. It is feasible to grow high-quality InP single crystals from which suitable substrates can be cut for device growth. Lattice-matched InGaAsP layers of different compositions can be grown on these substrates by liquid phase epitaxy.

    InGaAsP/InP planar buried heterostructure (BH) lasers with semi-insulating current blocking layers have been realized using LPE and MOCVD hybrid growth. The planar structure has been obtained by developing the selective embedding growth in MOCVD. Low threshold current of 17 mA and high efficiency of 42 percent have been attained with the BH lasers. We report on the design, fabrication and performance of a hetero-integrated III-V on silicon distributed feedback lasers (DFB) at nm based on direct bonding and adiabatic coupling. The continuous wave (CW) regime is achieved up to 55 °C as well as mode-hop-free operation with side-mode suppression ratio (SMSR) above 55 dB. At room temperature, the current threshold is 36 mA and the.

    SCH layer of m InGaAsP–InP MQW lasers [11]. It was shown that above the threshold, in agreement with prediction [8]–[10], the intensity of radiative recombination in SCH layer of m InGaAsP–InP MQW increases with the drive current and this increase correlates quantitatively with the decrease of the device slope efficiency. Costs come down when InP lasers are produced on a 4-inch GaAs line BY DEBDAS PAL, JAMES CARTER AND DEYIN ZHAO FROM MACOM In the s, InP lasers came on in leaps and bounds. It is from that decade that has emerged the distributed feedback laser, a device that operates in a single mode and produces emission with a narrow spectral width.


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Study of LPE methods for growth of InGaAsP/InP CW lasers Download PDF EPUB FB2

Study of LPE methods for growth of InGaAsP/InP CW lasers. Washington, D.C.: National Aeronautics and Space Administration, Scientific and Technical Information Office ; [Springfield, Va.: For sale by the National Technical Information Service],   Two methods for liquid phase growth of InGaAsP/InP lasers were studied.

Single phase growth, based on saturated melts and 5 C supercooling, was compared to two phase growth excess InP and 20 C nominal supercooling. Substrates cut on the () plane were used, and morphology in both cases was excellent and comparable to that obtainable in AlGaAs : I. Ladany, F.

Hawrylo, R. Smith, E. Levin. Study of LPE Methods for Growth of InGaAsP/InP CW Lasers I. Ladany, F. Hawrylo, R. Smith, and E. Levin RCA La borutories Princeton, New Jersey Prepared for Langley Research Center under Contract NAS l- National Aeronautics and Space Administration Scientific and Technical Information Office Study of LPE methods for growth of InGaAsP/InP CW lasers.

By R. Smith, E. Levin, F. Hawrylo and I. Ladany. Abstract. Two methods for liquid phase growth of InGaAsP/InP lasers were studied. Single phase growth, based on saturated melts and 5 C supercooling, was compared to two phase growth excess InP and 20 C nominal supercooling.

Study of LPE methods for growth of InGaAsP/InP CW lasers / By I. Ladany, Langley Research Center. and United States.

National Aeronautics and Space Administration. Scientific and Technical Information Office. Abstract "April "es bibliographical of access: Internet Topics.

Two methods for liquid phase growth of InGaAsP/InP lasers were studied. Single phase growth, based on saturated melts and 5 C supercooling, was compared to two phase growth excess InP.

Room temperature CW operation and threshold current densities below A/cm2 have been achieved near ?m wavelength with InP/InGaAsP/InP DH lasers grown by liquid phase epitaxy on ()-oriented InP substrates.

Journal of Crystal Growth. Vol Issue 1, JulyPages Comparison of single-and two-phase LPE growth methods for InGaAsP/InP lasers and LEDs. The mass transport phenomenon occurs in the bee ~ng period before this second Lk process, and etched grooves on both sides of the active layer are buried by transported InP.

LPE growth of InP and related alloys p-InGaAsP p-InGaAsP(ACTIVE) n-InP. p-InP n-InGaAsP Fig. Structure of DBH laser: (a) SEM photograph; (b) schematic view.

We describe a process for separate preparation of high-temperature solutions, which includes a prolonged preannealing (synthesis) at elevated temperatures. This process enables liquid phase epitaxy (LPE) of InGaAsP with highly reproducible physical properties (layer thickness, photoluminescence wavelength, and lattice parameter) and electrical characteristics (current-power.

Wakao's 57 research works with citations and reads, including: Fully dynamic and reconfigurable optical add/drop multiplexer on nm channel spacing using. InGaAsP/InP distributed-feedback (DFB) lasers operating at μm have been successfully fabricated by a hybrid growth technique of liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE).

A threshold current of mA at 23°C and single-longitudinal-mode operation have been obtained. Optimization of p-doping profile in µm InGaAsP/InP MQW lasers. In [] the study of the effect of p-doping on µm InGaAsP/InP MQW lasers performance was carried out experimentally.

It was shown that there exists an optimum p-i junction placement simultaneously maximizing external efficiency and minimizing threshold current. This paper presents a comprehensive review of the method of liquid phase epitaxy (LPE) of semiconductors.

In Sect. 1 the physical principles including diffusion-limited growth and solid-liquid phase diagrams are treated in detail. In Sect. 2 technological aspects and various kind of growth systems including industrial versions are described. Lasers emitting at SOSnm are the most important and efficient piuip offer an advantageous replacement for A1GaAs lasers.

An InGaAsP/GaAs SQW SCH has been grown by slightly modified LPE method and the output power as high as 4W in continuous wave(CW) has been obtained for the lasers fabricated from the wafer.

with the threshold current density. W.T. Tsangeta!. /Long wavelength InGaAsP/InP DFB lasers grown by CBE _____-by a 5 nm InP top layer. This ensures that there is-optical absorption at the lasing wavelength, lnGaAsP, has been shown previously that the pre-~wAvEGLflDE sent CBE system is capable of producing layers QUANTUM WELL having a thickness uniformity of ~ ±1.% and a.

The growth of InGaP, InGaAs and InGaAsP epilayers lattice matched to GaAs using the low pressure organometallic vapor phase epitaxy (LP-OMVPE) system was investigated. For the application of erbium-doped fiber amplifiers (EDFAs), the emission wavelength and far-field pattern of the pump laser were designed.

The optical and electrical performances of the resultant pump laser were measured. Individual stripe InGaAsP/lnP lasers emitting in a single spatial mode have been operated for times in excess of h at constant output power levels up to 40 mW (NA ) with no significant increase in drive current and at 60 mW (NA ) with drive current increases of typically %/h.

Units have been operated short-term at values of output power and facet flux density of mW and. InGaAsP Lasers for Fiber-Optic Systems.

The quaternary (four-element) semiconductor InGaAsP is a versatile laser material grown on substrates of InP. The sum of the number of indium and gallium atoms equals the total number of arsenic and phosphorous atoms. The reactive-ion-etching (RIE) technique utilising a TiO2 mask and Cl2-Ar gas is successfully applied to facet mirror fabrication of m InGaAsP/InP buried-heterostructure (BH) lasers.

Room-temperature CW operation has been achieved with a structure having one etched and one cleaved facet. Abstract: This paper presents an extensive study of the fundamental characteristics of InGaAsP/InP double-heterojunction (DH) lasers with a wavelength of μm. The confinement properties of injected carriers in the quaternary active region, the electrical properties such as leakage current and diode current versus voltage, the threshold characteristics, and the threshold temperature.INSTITUTE OF PHYSICS PUBLISHING SEMICONDUCTOR SCIENCE AND TECHNOLOGY Semicond.

Sci. Technol. 18 () – PII: S(03) Improved performance of µm InGaAsP–InP lasers with an AlInAs electron stopper layer Jinyan Jin and Decheng Tian Physics Department, Wuhan University, HubeiPeople’s Republic of China.

Of great practical importance for the InGaAsP laser heterostructures was the creation of the record threshold current density for InGaAsP–InP (emission wavelengths λ = and μm) and for InGaAsP–GaAs (λ =– μm) single quantum‐well separate confinement lasers.

68 For high power InGaAsP–GaAs (λ = μm) lasers, a total.